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| PN200 / MMBT200 / PN200A / MMBT200A Discrete POWER & Signal Technologies PN200 PN200A MMBT200 MMBT200A C E C B TO-92 E SOT-23 Mark: N2 / N2A B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 45 75 6.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN200A 625 5.0 83.3 200 Max *MMBT200A 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 A, IB = 0 IC = 1.0 mA, IE = 0 IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 40 V, IE = 10 VEB = 4.0 V, IC = 0 60 45 6.0 50 50 50 V V V nA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 A, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 200 200A 200 200A 200A 200 200A 80 240 100 300 100 100 100 450 600 350 0.2 0.4 0.85 1.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure VCE = 20 V, IC = 20 mA VCB = 10 V, f = 1.0 MHz IC = 100 A, VCE = 5.0 V, RG = 2.0 k, f = 1.0 kHz 200 200A 250 6.0 5.0 4.0 MHz pF dB dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V VCESAT- COLLECTOR EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 25 C 400 300 125 C = 10 25 C 200 100 0 0.01 - 40 C 0.1 0.05 0 0.1 125 C - 40 C 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) 1 10 100 I C - COLLECTOR CURRENT (mA) P 68 300 PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) 1.2 1 0.8 0.6 0.4 0.2 0 0.1 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V - 40 C 25 C 125 C - 40 C 25 C 125 C 1 10 100 I C - COLLECTOR CURRENT (mA) 300 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10 BV CER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0.1 75 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( C) 125 70 0.1 1 10 100 1000 RESISTANCE (k ) VCE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Input and Output Capacitance vs Reverse Voltage 100 Ta = 25C 3 f = 1.0 MHz 2 Ic = 100 uA CAPACITANCE (pF) 50 mA 300 mA 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT (uA) Vce - COLLECTOR VOLTAGE(V) PN200 / MMBT200 / PN200A / MMBT200A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 40 Switching Times vs Collector Current 300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10 td tf tr IB1 = IB2 = Ic / 10 V cc = 10 V Vce = 5V 30 ts 20 10 0 1 10 P 68 20 50 100 150 I C- COLLECTOR CURRENT (mA) 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Power Dissipation vs Ambient Temperature 700 P D - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 |
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